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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
-50 0 50 100 150 200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 10mA
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 10A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
for FCP190N60
Figure 10. Maximum Safe Operating Area
for FCPF190N60
100
10 μ s
100
10 μ s
1. T C = 25 C
1. T C = 25 C
2. T J = 150 C
2. T J = 150 C
10
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
o
100 μ s
1ms
10ms
DC
10
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
o
DC
100 μ s
1ms
10ms
0.01
0.1
3. Single Pulse
1 10 100
1000
0.01
0.1
3. Single Pulse
1 10 100
1000
V DS , Drain to Source Voltage [V]
Figure 11. Maximum Drain Current
vs. Case Temperature
25
20
15
10
5
V DS , Drain to Source Voltage [V]
Figure 12. Eoss vs. Drain to Source Voltage
10
8
6
4
2
T C , Case Temperature [ C ]
0
25
50 75 100 125
o
150
0
0
100 200 300 400 500
V DS , Drain to Source Voltage [ V ]
600
?2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
4
www.fairchildsemi.com
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